Light emitting diode (LED) test apparatus and method of manufacture

ABSTRACT

Embodiments relate to functional test methods useful for fabricating products containing Light Emitting Diode (LED) structures. In particular, LED arrays are functionally tested by injecting current via a displacement current coupling device using a field plate comprising of an electrode and insulator placed in close proximity to the LED array. A controlled voltage waveform is then applied to the field plate electrode to excite the LED devices in parallel for high-throughput. A camera records the individual light emission resulting from the electrical excitation to yield a function test of a plurality of LED devices. Changing the voltage conditions can excite the LEDs at differing current density levels to functionally measure external quantum efficiency and other important device functional parameters. Spectral filtering is used to improve measurement contrast and LED defect detection. External light irradiation is used to excite the LED array and improve onset of charge injection light emission and throughput.

This application is a nonprovisional of U.S. Patent Application No. 62/522,576 filed Jun. 20, 2017, the contents of which are incorporated by reference herein.

FIELD OF INVENTION

The present invention relates to light emitting diode (LED) devices. More particularly, embodiments of the invention relate to techniques, including methods and apparatus to functionally test a Light Emitting Diode (LED) array structure during the manufacturing process. In an example, the method is useful in general LED device functional testing and is particularly useful for functionally testing micro-LED (uLED) devices that can be as small as a few microns on a side. Micro-LEDs are grown on a support substrate utilizing techniques such as Metallo-Organic Chemical Vapor Deposition (MOCVD) among others. Before the individual devices are used in their final lighting or display application, it is desirable to test the LED devices to achieve one or more of the following: yield evaluation, binning, device repair/correction and collecting data for use in manufacturing process feedback/feedforward.

BACKGROUND OF INVENTION

Light emitting diodes (LEDs) have been used as a replacement technology for conventional light sources. For example, LEDs are found in signage, traffic signals, automotive tail lights, mobile electronics displays, and televisions. Various benefits of LEDs compared to traditional lighting sources may include increased efficiency, longer lifespan, variable emission spectra, and the ability to be integrated with various form factors.

Although highly successful, improved techniques for manufacturing LEDs is highly desired.

SUMMARY

During the LED manufacturing process, LED structures are formed on a substrate using mass-production processes like those utilized by the semiconductor industry. Process steps such as cleaning, deposition, lithography, etching and metallization are used to form the basic LED structure. To achieve mass-production scale manufacturing and lower cost, numerous devices are simultaneously formed on a substrate using these processes. Different substrates and materials are used depending on the type of LED desired. For example, UV-emitting LEDs are typically made from Gallium Nitride (GaN) material that have usually been either a heteroepitaxial layer on sapphire or free-standing GaN substrates made using Hydride Vapor Phase Epitaxy (HVPE) or ammonothermal methods. For other colors, GaAs or GaP substrates can be used. Recently, GaN, GaAs or other III-V semiconductor materials layer-transferred onto a support substrate has become available as another starting substrate type. Other possible LED structures that can be tested using methods disclosed in this invention are organic LED (OLED) device structures fabricated on plastic, glass or other suitable substrates.

Within the LED structure formation manufacturing process, various optical and other metrology tests are made to confirm quality and repeatability. Once the LED structure formation has been completed, it is desirable to perform a functional test of each LED device before the device is mounted for use as a LED emitter within a package or as an LED emitter within a display. Even if there is a common contact to all devices (i.e. all cathodes are tied together), each individual anode of each device would still require individual contact in order to functionally test its opto-electronic characteristics. The device size and sheer volume of individual LED devices on a substrate makes this a challenging task. For example, a 6″ substrate with LED devices measuring 250 μm on a side (typical of general lighting type LEDs) would contain over 250,000 devices, each requiring a contact probe/measurement cycle. If the 6″ substrate contained micro-LED device structures of 20 μm on a side, there would be a need to contact each of the more than 40 million devices present on the substrate. There is therefore a need to develop methods that allows functional LED device testing without individual contact.

Embodiments of the invention utilizes a non-direct electrical contact approach where the current is injected through a capacitor formed using a dielectric-coated field plate driven by a suitable voltage waveform source. The other side of the dielectric surface forms a capacitor placed in proximity to the plane of the individual LED contacts and specific voltage waveforms are driven between the field plate electrode and a common LED contact or a second capacitively-coupled LED contact. In a preferred embodiment, a voltage ramp drives the electrodes to forward bias the LEDs situated between these electrodes, developing a displacement current that flows current into each of the large plurality of LED devices in a parallel fashion. The functional response (light emission) is then measured using an integrating camera disposed either above the field plate or below the LED support substrate depending on the embodiment. Image capture and processing can then extract many functional device tests in parallel. In this manner, as few as two electrical contacts could functionally test LED devices numbering in the millions.

After each measurement, the capacitive field plate and other coupling capacitance elements must be reset or in a manner that would not damage the LED devices through excessive reverse bias voltage. A suitably slow negative voltage ramp would allow the LED device's minimum leakage current to safely discharge the field plate capacitor without developing damaging reverse bias conditions. Another measurement cycle can then be repeated.

Changing the forward bias drive voltage ramp would drive differing forward bias current density (A/cm²) into the LED devices, thereby allowing more complex functional test evaluations to be conducted. Device characterization data such as external quantum efficiency as a function of forward bias current density made possible by selecting different drive voltage waveforms are another feature of this invention. By modifying the field plate dielectric design and voltage ramp values, accurate current injection emission responses of a large plurality of devices can be detected over a large current density from about 0.001 to 10 or more A/cm2.

One benefit afforded by this functional test method is the elimination of high-pin count probe cards and probe needles that contact each addressable LED device under test. When such probe cards are used, each LED device is contacted using one or more needle probe pins that achieves electrical contact on a contact area by pressure and lateral motion of the sharp metallic pin. This process almost always produces contact pad scratches that can lower LED device yield and reliability. Test reliability, fabrication and maintenance costs of using probe pin cards having hundreds or even thousands of probe pins are also of concern. Elimination of probe card scratches or marks, increasing LED device yield and reliability and avoiding the use of expensive and failure-prone high-pin count probe cards is a key benefit of this invention.

Yet another benefit of afforded by this functional test method is the ability to functionally test within the LED manufacturing process due to the elimination of direct electrical contact. Clean-room compatible, scratch-free in-process testing of LED devices is a capability that would have otherwise being difficult or impractical to perform due to the necessity of high-density particle generating pin cards use by conventional test methods.

Other benefits afforded by this functional test method is its general applicability to both small and large LED devices and scalability to large substrates. The field plate is a structure that applies capacitance proportionally to area and thus, larger LED devices with more area are excited with a larger effective capacitance while small LED devices such as micro-LED devices are excited by a correspondingly smaller capacitance. Large LEDs of millimeter size on a side down to micro-LEDs as small as 10 μm or less on a side can therefore be tested with few modifications of the apparatus. Substrate scalability using larger field plates or using a step/repeat method with a smaller field plate is practical and readily achievable. For the highest throughput, parallel processing of multiple cameras arranged in an array over a large field plate would be able to functionally test all LED devices on a support substrate with as few as two electrical contacts and in some embodiments, with no direct electrical contact. Avoiding contacting each individual LED device that could number from many thousands to tens of millions on a substrate is a key benefit of this invention.

The method as described in this invention is described as Capacitive Current Injection (C²I) functional testing.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a simplified cross-section of an LED structure.

FIG. 2 shows an LED support substrate containing LED device structures within an LED mass-production process.

FIGS. 3A-B shows a top view (A) and a cross-sectional view (B) of a LED support substrate with singulated LED devices isolated by streets.

FIG. 4 shows the LED support substrate with a non-singulated LED device structure with the top contact layer having sufficiently high sheet resistance to allow current injection functional test in the presence of adjacent shorts.

FIG. 5A shows an embodiment of a field plate in close proximity to a portion of an LED device layer containing 4 LED devices on a support substrate.

FIG. 5B shows the corresponding equivalent electrical circuit of the embodiment of FIG. 5A.

FIG. 6A shows the main Capacitive Current Injection (C²I) measurement sequence: Current Injection/Measurement (I), Hold (II), Discharge/Reset (III) phases.

FIG. 6B shows the corresponding LED current injected by the Capacitive Current Injection (C²I) measurement sequence of FIG. 6A.

FIGS. 7A-B shows two embodiments of a field plate with camera looking through the field plate (A) and through the LED device support substrate (B).

FIG. 8 shows the expected current density (A/cm2) versus dV/dT voltage ramp of a preferred embodiment.

FIG. 9A shows a substrate scale method to attach the field plate onto a support substrate containing LED device structures using vacuum developed in the space between the field plate and the support substrate.

FIG. 9B shows a substrate scale method to attach the field plate onto a support substrate containing LED device structures using a liquid gap present in the space between the field plate and the support substrate.

FIG. 10 show a smaller field plate & camera optical system in a step/repeat mechanical configuration.

FIG. 11 show a circuit model used to simulate the C²I functional test method according to an embodiment.

FIGS. 12A-D show the detailed sequence of the current injection/measurement phase I of an embodiment.

FIGS. 13A-D show the detailed sequence of the current injection/measurement phase III of an embodiment.

FIGS. 14 A-D shows a longer time axis (200 msec) showing 4 measurement sequences of an embodiment.

FIG. 15A shows an embodiment of a field plate in close proximity to a portion of a LED device layer containing 4 LED devices on a support substrate with a buried common contact and dielectric layer.

FIG. 15B shows the corresponding equivalent electrical circuit of the embodiment of FIG. 15A.

FIG. 16 shows an embodiment of a field plate in close proximity to a portion of a LED device layer containing 4 LED devices on a support substrate that is used as a dielectric layer for capacitively coupling the second electrode.

FIG. 17 shows three LED structures A, B and C in which structure A is a vertical LED structure with top surface area accessing the top contact by top capacitive coupling and the bottom surface area accessing the bottom contact by bottom capacitive coupling, structure B is a lateral MESA-type LED structure with top surface area accessing both the top contact and bottom contact by top capacitive coupling and the bottom surface area accessing the bottom contact by bottom capacitive coupling, and structure C is a lateral MESA-type LED structure with a small top via opening to the bottom contact. Except for differing relative capacitance values, structure C is electrically similar to structure B.

FIG. 18 shows three capacitive coupling configurations A, B and C, where configuration A uses a common top field plate electrode, configuration B uses a patterned top field plate electrode only coupling to the top (anode) contact, and configuration C uses a patterned top field plate electrode with separate top (anode) and bottom (cathode) contacts.

FIG. 19 shows a charge injection response transfer function demonstrating the LED bias precharge effect using external light source irradiation prior to C²I charge injection.

FIG. 20A shows a representative UV-IR cutoff imaging filter transmission curve used in a specific embodiment.

FIG. 20B shows a representative bandpass imaging filter transmission curve used in a specific embodiment.

FIG. 21 shows a histogram plot of several LED devices falling within small ranges of Data_(n) values (called channels or bins) on the vertical scale as a function of Data_(n) in the horizontal scale.

DETAILED DESCRIPTION

A further explanation of LEDs is found throughout the present specification and more particularly below. In an example, one type of LED is an organic light emitting diode (OLED) in which the emissive layer of the diode is formed of an organic compound. One advantage of OLEDs is the ability to print the organic emissive layer on flexible substrates. OLEDs have been integrated into thin, flexible displays and are often used to make the displays for portable electronic devices such as cell phones and digital cameras.

Another type of LED is a semiconductor-based LED in which the emissive layer of the diode includes one or more semiconductor-based quantum well layers sandwiched between thicker semiconductor-based cladding layers. Some advantages of semiconductor-based LEDs compared to OLEDs can include increased efficiency and longer lifespan. High luminous efficacy, expressed in lumens per watt (lm/W), is one of the main advantages of semiconductor-based LED lighting, allowing lower energy or power usage compared to other light sources. Luminance (brightness) is the amount of light emitted per unit area of the light source in a given direction and is measured in candela per square meter (cd/m²) and is also commonly referred to as a Nit (nit). Luminance increases with increasing operating current, yet the luminous efficacy is dependent on the current density (A/cm²), increasing initially as current density increases, reaching a maximum and then decreasing due to a phenomenon known as “efficiency droop.” Many factors contribute to the luminous efficacy of an LED device, including the ability to internally generate photons, known as internal quantum efficiency (IQE). Internal quantum efficiency is a function of the quality and structure of the LED device. External quantum efficiency (EQE) is defined as the number of photons emitted divided by the number of electrons injected. EQE is a function of IQE and the light extraction efficiency of the LED device. At low operating current density (also called injection current density, or forward current density) the IQE and EQE of an LED device initially increases as operating current density is increased, then begins to tail off as the operating current density is increased in the phenomenon known as the efficiency droop. At low current density, the efficiency is low due to the strong effect of defects or other processes by which electrons and holes recombine without the generation of light, called non-radiative recombination. As those defects become saturated radiative recombination dominates and efficiency increases. An “efficiency droop” or gradual decrease in efficiency begins as the injection-current density surpasses a low value, typically between 1.0 and 10 A/cm².

Semiconductor-based LEDs are commonly found in a variety of applications, including low-power LEDs used as indicators and signage, medium-power LEDs such as for light panels and automotive tail lights, and high-power LEDs such as for solid-state lighting and liquid crystal display (LCD) backlighting. In one application, high-powered semiconductor-based LED lighting devices may commonly operate at 400-1,500 mA, and may exhibit a luminance of greater than 1,000,000 cd/m². High-powered semiconductor-based LED lighting devices typically operate at current densities well to the right of peak efficiency on the efficiency curve characteristic of the LED device. Low-powered semiconductor-based LED indicator and signage applications often exhibit a luminance of approximately 100 cd/m² at operating currents of approximately 20-100 mA. Low-powered semiconductor-based LED lighting devices typically operate at current densities at or to the right of the peak efficiency on the efficiency curve characteristic of the LED device. To provide increased light emission, LED die sizes have been increased, with a 1 mm² die becoming a fairly common size. Larger LED die sizes can result in reduced current density, which in turn may allow for use of higher currents from hundreds of mA to more than an ampere, thereby lessening the effect of the efficiency droop associated with the LED die at these higher currents.

LEDs have been used in portable devices such as watches, smartphones and laptops as well as computer monitors and TV displays for many years however only indirectly as an alternative white light source for Liquid-Crystal Display (LCD) display technologies. These were called “LED” TVs and the like, but the actual LEDs were predominantly GaN-based white LEDs to illuminate the backlight in lieu of the cold fluorescent lamp (CFL) backlight sources used before. The color pixel generation continued to be based on LCD technology that worked by a light subtraction process where colors are generated by blocking other colors using an intervening color filter. For example, a red pixel would be generated by a red color filter that blocked the green and blue portion of the backlight LED white spectrum. Grey scale (light intensity of the pixel) occurred by modulating light polarization through a liquid-crystal cell placed between two crossed polarizers along the light path.

Although the LED backlight driven LCD display technology was more efficient and reliable than the CFL backlit version, the technology is still not power efficient. The reason is simple: although the LED white backlight devices can be fairly efficient in terms of external quantum efficiency (photons emitted per electrical carriers injected into the LED device), there are numerous inefficiencies in the rest of this LCD display technology. The first polarizer will cut a little half of the non-polarized white backlight, then each pixel is colorized by subtracting ⅔ of the remaining light (R without GB for red, G without RB for green and B without RG for blue). Other losses include pixel fill factor and film/LCD cell absorption and scattering. The total light output is therefore less than about ⅙ of the white LED backlight intensity.

The trend is for more power efficient and bright display technologies, especially with portable, battery operated devices where battery life is a key factor. Micro-LED is a promising technology for achieving higher power efficiencies. In a micro-LED display, a small LED device placed within a pixel area is directly driven to generate light in a direct emissive manner. Color can be generated either by (i) utilizing blue to UV-LEDs (i.e. GaN-based) with color phosphors or quantum-dot color conversion layers to generate the pixel colors by photon down conversion and/or (ii) by using LEDs that generate the color directly (i.e. AlGaAs, GaAsP, AlGaInP, GaP for red, GaP, AlGaInP, AlGaP for green and ZnSe, InGaN, SiC for blue). In either case, the direct emission/direct view of the micro-LED display promises a six-fold improvement or more in power efficiency.

Although the basic technology to realize micro-LED based displays is well known, numerous manufacturing and quality control challenges exist. One of these is functionally testing millions of micro-LED devices within the manufacturing process in a cost-effective and efficient manner before the pixels are committed to use. It is therefore desired to enable functional testing without direct electrical contact and in a manner compatible with micro-LED large-scale manufacturing processes. Further details of the present invention can be found throughout the present specification and more particularly below.

Embodiments of the present invention describe LED device fabrication processes and manners of functionally testing LED devices without direct electrical contact. In particular, some embodiments of the present invention may relate to manners of functionally testing high-brightness LED, medium power LED, low-power LED and micro LED devices.

In various embodiments, description is made with reference to figures. However, certain embodiments may be practiced without one or more of these specific details, or in combination with other known methods and configurations. In the following description, numerous specific details are set forth, such as specific configurations, dimensions, and processes, etc., in order to provide a thorough understanding of the present invention. In other instances, well-known semiconductor processes and manufacturing techniques have not been described in particular detail in order to not unnecessarily obscure the present invention. Reference throughout this specification to “one embodiment” means that a feature, structure, configuration, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention. Thus, the appearances of the phrase “in one embodiment” in various places throughout this specification are not necessarily referring to the same embodiment of the invention. Furthermore, the features, structures, configurations, or characteristics may be combined in any suitable manner in one or more embodiments.

The terms “spanning”, “over”, “to”, “between” and “on” as used herein may refer to a relative position of one layer with respect to other layers. One layer “spanning,” “over” or “on” another layer or bonded “to” or in “contact” with another layer may be directly in contact with the other layer or may have one or more intervening layers. One layer “between” layers may be directly in contact with the layers or may have one or more intervening layers.

Certain embodiments of the invention describe an LED device assembly in which an LED device structure layer is transferred from a support substrate and bonded to a pickup plate assembly before further processing. In accordance with embodiments of the present invention, the C²I functional testing step can be applied either before the transfer or after one or more transfers. For the purposes of simplifying the various possible configurations wherein the plurality of the LED structures is transferred and possibly bonded onto a different substrate, the target substrate shall be called a support substrate in each case. For example, the substrate that supported the LED structures during MOCVD growth is also called a support substrate, however after release and attachment to a pickup plate, such a plate and any other substrate or plate used to mechanically support the LED device layer will also be called a support substrate. If a pickup plate is used, common electrical contact can be accomplished using an electrically conducting material film between the transferred LED device structures and the rest of the pickup plate. As further described below, the common contact can also be accomplished using a second dielectric layer and optional voltage waveform source. In some cases, the pickup plate material would also have a degree of controllable tackiness to allow LED device pickup and transfer in production. Additionally, the support substrate can be a flexible sheet such as a plastic film and the C²I can be used to test device structures on individual sheets or as part of a roll-to-roll manufacturing process (for example in an Organic-LED or OLED manufacturing process). The term support substrate will be generally used to connotate its role as mechanical support and will be the substrate described as part of (C²I) functional testing apparatus throughout this description.

Although the embodiments of this invention describe singulated and non-singulated LED device structures, additional electronics such as active-matrix addressing circuitry and support electronics can be present. Applying design for testability approaches and using the general ability of the C²I functional test methods could successfully test complex interconnected LED structures. For purposes of this invention, specific descriptions of the LED structures shall be taken as merely examples and the test methods is to be understood as generally applicable to test singulated, non-singulated, lateral and vertical LED structures with or without integrated addressing and other support electronics.

Depending on the specific embodiment of this invention and the point in the manufacturing process C²I functional testing is made, the support substrate can be transparent and have additional coatings. These either directly support the test process or exist as part of the requirements of the specific LED manufacturing process step as will be described in more detail below.

Referring to FIG. 1, a representative LED 104 comprises of deposited layers that form a n-type cathode layer 100, an active layer (usually a Multi-Quantum Well or MQW series of sub-layers) 101 and a p-type layer 102 and p-contact 103. This LED structure is simplified and many additional layers such a buffer layers, blocking layers, n-contact layer(s) and the like are not shown for simplicity. Electrically, the LED would be contacted through layer 103 (or contact 106) as the anode and through layer 100 (or contact 105) as the cathode. In some LED structures, the n and p layers can also be contact layers and thus can be named interchangeably for purposes of this invention unless specifically described otherwise. Passing current through the LED device using a forward (positive voltage) bias from anode to cathode would generate light from radiative recombination processes from carriers flowing through the active region. The design of the active layer 101 is optimized for maximizing radiative recombination processes that emit light. Reverse biasing the LED structure will not generate light. Limiting reverse bias voltage is important with LEDs to avoid damaging or destroying the device through a process called breakdown. Within a safe reverse bias region, small leakage currents flow through the device.

In LED manufacturing, the LED devices are made in mass-production using methods similar to substrate-based mass-production processes common in the semiconductor industry. Referring to FIG. 2, the LED structure described in FIG. 1 is deposited onto a suitable growth or support substrate 201 to make an LED substrate 200. Depending on the type, quality and color of the LED desired, different substrate material types can be used. Examples are GaP, GaAs, GaN substrates or heteroepitaxial growth substrates such as sapphire and silicon carbide (SiC) are also possible. Layer-transferred semiconductor layered template substrates are yet another type of growth substrate. The LED structure is then growth to develop a lower contact 202 (n-type or cathode in this example), active region 203 and upper contact 204 (p-type or anode in this example).

The LED substrate of FIG. 2 contains multiple, non-singulated LED structures. Isolation of individual LED devices of the desired size and function can be made within the LED manufacturing sequence using process steps such as etching, lithography, passivation and deposition. Referring to FIGS. 3A and 3B, the desired LED devices can be isolated while residing on support substrate 301 using processes such as etching to form for example a trench 308. If these etch structures (sometimes called “streets”) are made over the substrate to form individually isolated structures such as square devices, a high number of LED devices 309 are electrically isolated and available for release and packaging. In this example, the trench 308 does not etch through the bottom common contact layer 302 and can thus be connected to a common potential 310. Each LED device 309 can thus be individually contacted using a voltage source 306 to the p-layer 304 and p-contact layer 305. Light 307 can then be measured from the contacted device to evaluate its functionality. In this example, a top emitting LED structure is shown where the top contact 305 could be a transparent electrode such as Indium Tin Oxide (ITO). Other structures are possible such as a bottom emitting structure. In this case, the support structure would be preferably transparent and the p-contact layer would be a light reflecting layer such as a metal layer. The LED would thus be tested by measuring the light escaping from the support substrate. Although the above was described as preferred embodiments to maximize the light capture, it would be possible to measure indirectly scattered or reflected light from LEDs even if the light measurement was done, for example, above the LED in a bottom emitting LED structure. Of course, there can be other variations, modifications, and alternatives.

FIG. 4 shows a support substrate 401 where the LED devices are still not isolated. If the top contact layer 405 has a limited conductivity (such as an ITO layer with a relatively high film sheet resistivity), functional testing could still be accomplished despite a short 408 present nearby. Contacting a point on the surface using a voltage source 406 would develop a current through the top contact 405, p-layer 404, active layer 403, n-layer 403 to common contact 402. The relatively high resistance to the neighboring short 408 could allow light emission 407 to occur. Using a field plate in lieu of this direct contact example according to an embodiment of this invention would allow non-singulated LED layer testing. Dark (non-emissive) or weakly emissive areas would be an indicator of LED layer functional yield at an early stage of the LED manufacturing process. The efficacy and spatial resolution of this alternative embodiment would be a function of top layer sheet resistivity.

There is therefore a need to inject a current to excite individual LED devices or LED areas such as described in FIGS. 3 & 4 in a manner that can support large-scale manufacturing.

In a preferred embodiment, the invention has as its current injection device a field plate comprising of 3 elements: a mechanical support plate, an electrode and a dielectric layer. Referring to FIG. 5A, the field plate 501 comprises of a field plate support (top), electrode layer 502 connected to a voltage source 503 and adjacent to one face of dielectric layer 504. The mechanical support plate can also be electrically conductive and only require a dielectric layer.

The invention is primarily described with a physical dielectric layer 104 such as an oxide or other insulator such as a polymer or plastic overlying the electrode layer 502 but this is not necessary. Desired charge injection can also be made to occur if a suitable gap medium is selected between the electrode layer 502 and the device contact layer 508. In such embodiments, care in biasing should be taken to avoid unwanted resistive shorts or dielectric breakdown within the gap medium. In numerous succeeding examples, the field plate dielectric and a gap dielectric is described, sometimes with the gap layer assumed to have a sufficiently high capacitance to have a negligible effect on the effective system coupling capacitance. The combination of intervening region(s) between the field plate conductive layer and the light-emitting diode structure is also called the interface region. It is to be understood that the effective field plate coupling capacitance can also consist of a gap medium with or without a field plate dielectric layer. Of course, there can be other variations, modifications, and alternatives.

The field plate electrode would be connected to voltage source 503 and the open face of the dielectric layer 504 would form a capacitance per unit area of: C′ _(FP)=ε_(o×)ε_(r) /t _(d)  (1)

-   Where -   C′_(FP) is the capacitance per unit area of the field plate (F/cm²) -   ε_(o) is vacuum permittivity (8.854×10⁻¹⁴ F/cm) -   ε_(r) is the relative permittivity of the dielectric layer     (dimensionless) -   t_(d) is the dielectric layer thickness (cm)     In an example, important material characteristics of the dielectric     layer material includes dielectric constant, dielectric breakdown     strength, resistivity, and optical transmissivity. For capacitive     coupled configurations, readily deposited dielectrics such as     silicon dioxide, silicon nitride and alumina (Al₂O₃) are of     particular interest. If a DC test configuration is desired, a     dielectric having limited current leakage would allow DC biasing if     coupled to the device using an appropriate gap medium also having     limited resistivity. In such a configuration, the field plate     dielectric can be optional where the field plate voltage can now be     directly coupled to the LED devices through the gap medium. Of     course, there can be other variations, modifications, and     alternatives.

Again referring to FIG. 5A, the field plate 501 would be placed sufficiently near LED support structure 505 with an n-contact bottom electrode 506 connected to a common contact 507 and a plurality of p-contact top electrodes 508. Although the voltage across each LED device is shown in this description as being developed using a voltage source 503 and common contact 507, the voltage source can be alternatively connected to the bottom or two voltage sources can be connected, one to each of electrodes 502 and 506. The effective LED device drive voltage would be the voltage difference between contacts 503 and 507 for all voltage source configurations. For this invention, the term “close proximity” shall mean the open face of the field plate dielectric layer 504 is placed in sufficient proximity to the open face of the LED structure contact surface 508 to allow a desired electrical coupling between the voltage source 503 to the top LED electrode surface 508. In FIG. 5A, this gap is shown as 509 and can be minimal with a limited gap or no gap. Gap 509 should be small enough to allow sufficient capacitive coupling (for optimizing the current injection efficiency) and to minimize spatially defocusing the current injection effect. For top plate 501 with a relatively thick dielectric layer 504 and higher voltage levels on voltage source 503, a limited gap 509 is possible to allow non-contact testing without significantly lowering coupling efficiency (C_(EFF)′˜C_(FP)′).

The electrical analogue of the structure made by assembly 500 is shown in FIG. 5B. Voltage source 510 (503 in FIG. 5A) is connected to an effective capacitor C_(EFF) 511 connected to LED device 512 having a top surface area A_(EFF). A voltage change will impress a current I_(LED) onto LED device 512. For this example, isolation of LED devices with a common bottom contact is assumed. The effective capacitance C_(EFF) is simply the series capacitance of the field plate dielectric layer with the capacitance of gap 509, both of area A_(EFF): C′ _(gap)=ε_(o×)ε_(r) /t _(gap)  (2)

-   Where -   C′_(gap) is the capacitance per unit area of the gap (F/cm²) -   ε_(o) is vacuum permittivity (8.854×10⁻¹⁴ F/cm) -   ε_(r) is the relative permittivity of the gap medium (dimensionless) -   t_(gap) is the gap thickness (cm) -   and     C _(EFF) =A _(EFF)×(C′ _(FP) ×C′ _(gap))/(C′ _(FP) +C′ _(gap))  (3)     C _(EFF)=(C′ _(FP) ×C′ _(gap))/(C′ _(FP) +C′ _(gap))  (4) -   Where -   C_(EFF) is the effective LED device coupling capacitance (F) -   C′_(EFF) is the effective LED device coupling capacitance per unit     area (F/cm²) -   A_(EFF) is the effective LED device area (cm²)

In yet other embodiments, the field plate is without a field plate dielectric layer 504 between the field plate electrode 502 and the LED device under test top contact 508. The gap material would serve as the dielectric material. Although a vacuum or air gap is less cumbersome than a liquid, the lower relative dielectric constant (roughly unity) of these mediums can capacitively couple less efficiently and become weakly ionized or even breakdown under sufficiently high bias conditions. If the gap material is of a suitably high dielectric constant, dielectric strength and resistivity, efficient coupling of the field plate potential can help improve capacitive coupling efficiency. For example, deionized (DI) water may be a good candidate liquid material to serve as a gap dielectric. With a high relative dielectric constant of DI water (ε_(r)˜81) and breakdown electric field of about 13 MV/m, a DI water filled gap layer can efficiently inject charge per unit area without breaking down. Bulk resistivity of pure to ultra-pure DI water range about 1-18 Megohm-cm. Type II DI water (>1 Megohm-cm) may be sufficient to serve as a gap dielectric without excessive injected bias relaxation if the gap parameters (i.e. thickness) and injection and measurement timing are appropriately selected.

If a liquid is selected as a gap medium, DI water is also industrially desirable due to its low cost, broad availability, materials compatibility and cleanliness compared to other possible liquids such as methanol and ethylene glycol.

For the next embodiments, C′_(EFF) will be made equal to C′_(FP) by a field plate dielectric layer coupled to the LED device via a sufficiently small gap 509 and/or using a gap medium with a high relative dielectric constant.

The current I_(LED) 513 and current density J_(LED) are readily calculated as: I _(LED) =C _(EFF) ×dV/dt  (5) J _(LED) =C′ _(EFF) ×dV/dt  (6) Where dV/dt is the voltage rate of change between the voltage source 510 and the common electrode 507 in FIG. 5A (or the cathode contact in FIG. 5B). For this particular embodiment, LED 512 is connected anode to cathode however cathode to anode injection is possible by reversing all voltage polarities.

FIGS. 6A and 6B shows the voltage and current waveforms that would form a measurement sequence according to a preferred embodiment of this invention. There are at least 2 phases in the measurement sequence, the current injection phase I (at time t₀ to t₁) and the discharge phase III (at time t₂ to t₃). A voltage holding phase II has been added to allow for enough time for the camera integration window to close before phase III commences however this can be very short and may not be necessary. The phases are described in more detail below and assumes null voltage at all point before t₀.

Referring to FIG. 6A, a voltage source-time plot 600 shows the voltage source waveform. At time t₀, phase I begins with a positive ramp dV/dt|₁ from 0 to V₁ from time t₀ to t₁. This ramp will inject a current I_(LED) into a LED of area A_(EFF) according to equation (5) and a corresponding current density J_(LED) according to equation 6. At time t₁, the voltage is held at this voltage V₁ until time t₂. From time t₂ to t₃, the voltage is lowered back to a zero-voltage state using a negative ramp dV/dt|₂. At time t₃, another measurement sequence can then commence.

FIG. 6B shows the corresponding current I_(LED) waveform during the measurement sequence from the driving waveform of FIG. 6A. During phase I, a near constant I_(LED) current will flow through the LED device according to equation (5). Light 602 will be emitted during Phase I. During Phase II, I_(LED) and light emission will drop to 0. To measure the light output of a particular LED device among a plurality of devices simultaneously being excited by the field plate, an integrating camera that can capture the light from one or more LED devices is used. Image processing can generate a value proportional to specific LED devices located within the camera's field of view. This value would be in turn proportional to the optical energy integrated over phase I. It is therefore desirable to start an image sensor integrating time period from a point slightly before t₀ to an end point slightly after t₁. This will ensure the camera integrating sensor will capture the complete light pulse emanating from the LED structures during phase I.

FIGS. 7A and 7B shows two embodiments of the invention. The figures show top and bottom camera placement that can intercept at least a portion of the plurality of LED devices being excited by the measurement sequence through the field plate. Referring to FIG. 7A, a test configuration 700 is shown with a transparent field plate assembly 702 including a field plate electrode 703 and dielectric layer 704. Electrode 703 is connected to a voltage source 705. This assembly is placed in close proximity to the LED device support substrate 701 supporting a plurality of LED device 707 connected to a common contact 706. A camera 708 is placed above the field plate assembly 702 to perform the functional test. FIG. 7B shows an alternative test configuration 709 where the camera is placed below the support substrate. In this configuration, the support substrate and intermediate layers to the LED device structures must be transparent to allow the light to reach the camera.

Optical power generated by an LED is related to electrical power flowing through the LED by the external quantum efficiency η_(EXT) or P_(opt)=η_(EXT)×P_(elec). The parameter η_(EXT) is in turn quite sensitive to the current density and other device characteristics such as light extraction efficiency. The optical power of an LED device is thus related to electrical power as: P _(opt)=η_(EXP) ×P _(elec)=η_(EXT) ×I _(LED) ×V _(F)=η_(EXT) ×C _(EFF) ×dV/dt×V _(F)  (7)

-   Where -   P_(opt)=LED optical power (W) -   η_(EXT)=LED external quantum efficiency -   V_(F)=LED forward voltage drop (V)     Over a time period Δt=t₁−t₀ (phase I):     E _(opt)=η_(EXT) ×C _(EFF) ×dV/dt×V _(F) ×Δt=η _(EXT) ×C _(EFF)     ×ΔV×V _(F)=η_(EXT) ×Q _(inj) ×V _(F)  (8) -   Where -   E_(opt)=LED optical energy emitted during phase 1 (J) -   ΔV=Total voltage change over Δt (V) -   Q_(inj)=Injected charge (Coulombs)

According to equation 8, the integrating camera will measure a value proportional to each measured LED's external quantum efficiency. Changing the voltage ramp value will have the effect of selecting a different current density according to equation 6. By plotting Eopt as a function of ramp value to V₁, a plot of light energy (related to η_(EXT)) as a function of J_(LED) can be generated. This capability can be particularly useful to measure low current density performance of micro-LED devices. Micro-LED devices are typically driven at very low values of 0.001-1 A/cm² and are more sensitive to drop in external quantum efficiency at these low levels due to non-radiative recombination processes.

During phase III, a negative dV/dt ramp allows the voltages to be returned to zero to reset the system for another measurement. During this phase, the LEDs will be reverse biased and will discharge C_(EFF) using reverse bias leakage current. So as not to reverse bias the LEDs to a voltage level that can cause damage, the negative voltage ramp must be sufficiently slow to keep all devices within a safe reverse bias voltage range. Such a range can be selected depending on the type and design of the LEDs to be tested. As merely an example, reverse bias leakage current density for GaInN LEDs can be estimated using a paper entitled “Transport mechanism analysis of the reverse leakage current in GaInN light-emitting diodes”, Q. Shan & al., Applied Physics Letter 99, 253506 (2011). FIG. 2 shows a −5V reverse bias leakage current of approximately 1.5×10⁻⁷ A on a 1 mm² LED device at room-temperature. This corresponds to 15 μA/cm². This reverse bias leakage current density will be used to calculate values and parameters for specific C²I examples described in first examples below. In yet other embodiments that will be described later in this invention, an externally applied light source can increase the available leakage current to safely lower the discharge time and improve system throughput.

Suitable integrating cameras must satisfy the following criteria:

-   -   a. Pixel sensitivity and dynamic range (allows LEDs to be         accurately measured through the operating range of interest         without excessive dark noise and signal saturation).     -   b. High pixel density and frame rate (increases throughput and         parallel LED measurement).     -   c. Global shutter and flexible triggering (all pixels must be         triggered and integrate over the same time period).         One example of an industrial camera meeting these criteria is         model GS3-U3-23S6M-C from PointGrey Research Inc., Richmond, BC,         Canada. The camera is a 2.3 megapixel (1920×1200) monochromatic         camera with global shutter, 5 μsec to 31.9 sec exposure range,         over 160 frames per second rate, 1/1.2″ sensor format, 12-bit         digitization, 5.86 μm pixel size, 72 dB dynamic range, 76%         quantum efficiency (525 nm), an e-saturation capacity of about         32,000 electrons and temporal dark noise of about 7 e-. Used         singly or in a matrix arrangement where n×m cameras would be         used to measure a larger field plate area simultaneously, the         camera will have the capability to measure numerous LED devices         with the requisite accuracy.

For the following examples, a field plate with a 3 μm silicon dioxide dielectric layer is assumed (ε_(r)=3.9). This dielectric material is commonly used and can be sputtered, grown or deposited on numerous materials. The thickness was selected to be sufficiently thin to support a voltage exceeding about 1500 volts before breakdown. C′_(FP) would be 1.15 nF/cm².

A value for V₁ of 500V is assumed (see FIG. 6A). With these assumptions and parameter selections, the light pulse energy per LED can be simplified as: E _(opt)=η_(EXT) ×C _(EFF) ×ΔV×V _(F)  (9)

For the parameters selected, FIG. 9 shows the current density selected for a voltage ramp time period. For example, the LED would be driven at 0.01 A/cm² if the field plate voltage was driven from zero to +500 Volts in approximately 60 μsec (phase I). The camera shutter would be opened slightly before the ramp begins (for example, 10-50 μsec before t₀) and would be opened slightly after the end of phase I (for example, 10-50 μsec after t₁). Apart from ensuring that the phase I LED light pulse is fully integrated within the camera shutter time window, excessive integration time should be avoided as this will tend to raise the noise floor of the camera. Phase II can be selected to end just as the integrating shutter closes.

To safely recover during phase III, equation 6 is utilized with the current density selected to be approximately equal to the leakage current density. For example, utilizing a target leakage current density of 10 μA/cm² (a little lower than the expected leakage of 15 μA/cm²) and ΔV=500V, equation 6 predicts a minimum Δt of almost 60 msec. This corresponds to a measurement repetition rate of about 16 frames per seconds for injection current densities of 0.0005 A/cm² or above.

To estimate the signal achievable with this measurement approach and the area covered by one camera, the following additional parameters are assumed:

-   -   a. GaN LED (about 410 nm emission & 65% camera quantum         efficiency)     -   b. V_(F) about 3V     -   c. E_(opt)=170 nJ/cm2 (η_(EXT)˜10%)         At about 3 eV per photon, approximately 3.5×10¹¹ photons/cm² are         emitted during phase I. The number of corresponding         photo-electrons that can be generated within the camera would be         0.65×3.5×10¹¹ photons/cm² or 2.3×10¹¹ photo-electrons/cm²         (assuming sensor to field plate 1:1 magnification and 100%         collection efficiency). At this magnification, a 5.86 μm pixel         size would still capture over 78,000 electrons, more than twice         the pixel saturation capacity. A lower V₁ voltage could be         selected if a lower integrated photo-electron count per camera         pixel is desired.

Using a 0.5× collection lens (model #62-911 TECHSPEC™ large format telecentric lens manufactured by Edmund Optics, Barrington, N.J., USA) as an example, a roughly 21 mm×16 mm LED substrate area will be imaged onto the image sensor, although there can be variations. The working distance is 175 mm and the entrance aperture is roughly 90 mm, resulting in about 1.7% total collection efficiency compared to 4π sr. The expected photo-electrons collected would be 2.3×10¹¹ photo-electrons/cm²×(5.86 μm×2)²×0.017=5.3 ke⁻/pixel. This is well within the sensor's dynamic range and signal averaging or increasing V₁ could further improve signal quality if desired. Of course, there can be other variations, modifications, and alternatives.

The imaging of the field plate to the camera sensor area is thus less a function of the available signal than the number of pixels allocated per LED device. For a larger LED device measuring 250 μm on a side, less magnification is necessary. Assuming a 2×2 pixel area to cover each LED device for accurate metrology, one camera could measure 960×600 LED devices, 240 mm×150 mm field plate area or more than the area of a 6″ support substrate. In this example, V₁ could be reduced to less than 100V and perhaps lower while still maintaining excellent signal to noise ratio. If the light pulse energy is too high, a neutral density filter or other absorption filter can be placed between the emitting surface and the camera to avoid camera saturation.

For a micro-LED application with 10 μm×10 μm LED device size, the same 960×600 LED devices per sensor would be measured or about 9.6 mm×6 mm field plate area. A step and repeat system with approximately 16×25 steps would allow testing of a 6″ micro-LED substrate containing over 170 million devices. If a single measurement per LED device is sufficient, a synchronized image capture with a moving camera or cameras could decrease test time to less than 1 minute or even a few seconds. For example, a 16 frame per second capture rate would allow a full 6″ substrate to be functionally tested in about 25 seconds. That would correspond to over 9 million LED devices tested per second, far faster than probe cards and individual test methods.

In a preferred embodiment, FIG. 9 shows a substrate-sized field plate can be attached to a support substrate using vacuum (FIG. 9A) or a liquid such as DI water (FIG. 9B) to make an assembly 900 or 910 suitable for functional test. FIG. 9A shows an example where vacuum is used as a gap medium. The field plate 901 is placed on the LED device support substrate 902 with a compliant vacuum seal 903 placed on the outside peripheral area to maintain a level of vacuum between the field plate and the LED device support substrate. The air is then evacuated in the space between the plates using vacuum port 904. The plates would be pressed together at up to atmospheric pressure to minimize the gap in a uniform manner, thus optimizing the effective field plate coupling capacitance C_(EFF). A support substrate exchange mechanism could exchange substrates to be tested under the field plate by cycling port 904 between vacuum and vent conditions. A camera 905 that measures above the field plate is shown in this embodiment. FIG. 9B shows an example where liquid is used as a gap medium. The field plate 911 is placed on the LED device support substrate 912 with a compliant seals 913 placed on the outside peripheral area to maintain a level of sealing between the field plate and the LED device support substrate. The air is then evacuated in the space between the plates and replaced by the liquid medium using gap liquid fill input port 914 and gap liquid fill output port 915. A negative pressure can be maintained by adjusting the input and output fill port parameters. After filling the gap with the liquid medium, the plates are kept pressed together at up to atmospheric pressure to minimize the gap in a uniform manner, thus optimizing the effective field plate coupling capacitance C_(EFF). Reversing the process with a backfill gas would largely evacuate the liquid. A support substrate exchange mechanism could exchange substrates to be tested under the field plate by cycling the gas or liquid port(s) between a vent/exchange state to a state that allows measurement with the desired gap medium. These embodiments show a camera 905 or 916 that measures above the field plate. Of course, there can be other variations, modifications, and alternatives.

In another embodiment, FIG. 10 shows an assembly comprising of a smaller field plate 1000 and camera 1001 placed above an LED device support substrate 1002. The field plate/camera assembly is moved in successive move/measure steps 1003 to measure the complete substrate 1002. Of course, there can be other variations, modifications, and alternatives.

Electrical simulations of the measurements sequence showing the main phase 1 and 3 waveforms are shown in FIGS. 11-14. The system being simulated is as follows:

-   -   1. Field plate: 3 μm silicon dioxide, C′_(EFF)=1.15 nF/cm2     -   2. 10 μm×10 μm LED device size: 1.15 fF C_(EFF), 15 pA reverse         leakage current     -   3. 0.01 A/cm² current density test point     -   4. V₁=500V (60 μsec ramp time to achieve 0.01 A/cm² current         density injection)     -   5. 60 msec measurement repetition rate     -   6. LED device is a standard diode capable of reverse leakage         current of about 10 pA         The program used is a SPICE circuit simulator called Micro-Cap         version 11 from Spectrum Software (Sunnyvale, Calif.). One 10         μm×10 μm LED device was simulated under the above conditions.         FIG. 11 shows the circuit diagram where C_(EFF)=1.15 fF driven         by a voltage generator V2. This generator was programmed to ramp         from 0 to +500V in 60 μsec followed by a 60 msec ramp down from         +500V to 0V. Voltage source V3 is unconnected but was programmed         to show an example of a desired camera shutter window. In this         example, the shutter is opened 10 μsec before phase I and closes         10 μsec after phase I.

FIG. 12A-D shows the Phase 1 waveforms with the voltage source V2 (FIG. 12A), LED device forward bias (FIG. 12B), LED device forward current (FIG. 12C) and the camera shutter control signal from voltage source V3 (FIG. 12D). Referring to FIG. 12D, the camera integrator shutter opens 10 μsec before the start of the voltage (at time +10 μsec on the time axis). At time +20 μsec on the time axis, the voltage source starts to ramp towards +500V (time t₀). During this phase I until time +80 μsec, the LED device is biased at +10 nA (FIG. 12C) at a forward bias of approximately +250 mV (FIG. 12B). This corresponds to 0.01 A/cm² current density as desired. After time +80 μsec, the voltage ramp stops and the LED current drops to zero. At time +90 μsec, the camera shutter closes, completing its integration of the light pulse that was generated during phase I. The voltage source will now start a slow discharge at a target leakage current of −10 pA. FIG. 13A-D shows the same voltage and current points during the phase III discharge lasting about 60 msec. FIG. 13C shows a −10 pA discharge current that allows C_(EFF) to discharge over 60 msec from +500V to 0V safely. After the voltage source is returned to zero at about +60 msec, a new measurement sequence is initiated. FIG. 14A-D shows a longer time axis (200 msec) showing 4 measurement sequences.

The field plate electrode is connected to voltage source 503 and the open face of the optional “leaky” dielectric layer 504 form a capacitance per unit area of: C′ _(FP)=ε_(o×)ε_(r) /t _(d)  (10)

-   Where -   C′_(FP) is the capacitance per unit area of the field plate (F/cm²) -   ε_(o) is vacuum permittivity (8.854×10⁻¹⁴ F/cm) -   ε_(r) is the relative permittivity of the dielectric layer     (dimensionless) -   t_(d) is the dielectric layer thickness (cm)     The dielectric would have a resistivity of ρ_(d), selected to allow     the desired biasing of the LED devices in a DC bias configuration.     The time constant driving the bias response time is     ε_(o)×ε_(r)×ρ_(d). The effective resistance can be calculated as     follows:     R′ _(FP)=ρ_(d) ×t _(d)(ohms-cm²)  (11) -   Where -   R′_(FP) is the resistance for a unit area of the field plate     (ohms-cm²) -   ρ_(d) is the resistivity of the field plate dielectric layer     (ohm-cm) -   t_(d) is the dielectric layer thickness (cm)     In an example, the leaky dielectric layer can be generally described     as a layer with a reasonably high relative dielectric constant,     resistivity on the order of 1 Mohm-cm or higher and a sufficiently     high dielectric breakdown field strength. Type II DI (deionized)     water meets these criteria with a dielectric constant of 81,     resistivity of 1 Mohm-cm and a breakdown field strength exceeding 13     MV/cm. In other examples, the layer can be a slightly conductive     doped glass/ceramic, plastic or the like. If a small relative     dielectric constant of about 1 is acceptable, an air layer with a     voltage within a gap could become slightly conductive by weak     ionization to accomplish the function of a “leaky” dielectric layer.

Although this invention has been described with a common contact existing under the LED devices, other current injection configurations are possible. FIG. 15A shows another embodiment 1500 where an analogue to the field plate 1501 is present within support substrate 1502 below the plurality of LED device structures such as LED device 1503. Under the lowest LED device structure layer (the n-layer in examples described in this invention), a dielectric layer 1504 and electrode 1505 completes the support substrate capacitive coupling device. Electrode 1505 is connected to a voltage source 1506. The field plate is connected to a separate voltage source 1507 and field plate electrode 1508. In this example, a camera 1509 is placed above the field plate to capture the light emission response of the plurality of LED devices under test. In this example, the isolation between devices is shown to be complete, however this method would still function with or without full isolation of the n-layer. FIG. 15B shows the equivalent circuit 1511 of this capacitively coupled support substrate configuration. The only change is the insertion of a second coupling capacitor C_(EFF2) below each LED device cathode. The resulting circuit can be made to operate equivalently and be effective in performing C²I functional test. For example, assuming a support substrate dielectric layer 1504 identical to dielectric layer 1510 within the field plate, voltage source 1506 driven identically but negatively to voltage source 1507 (0 to −500V for source 1506 and 0 to +500V for source 1507), the measurement system 1500 would perform essentially identically to a common contact support substrate configuration.

In yet another embodiment, C²I functional testing could also be applied to a modification of the test configuration of FIG. 15A that eliminates the need for a buried electrode within the support substrate. In this embodiment, the dielectric property of the support substrate itself is used to inject current through the LED devices. For example, a quartz, sapphire, glass or plastic support substrate could serve as dielectric 1504 in FIG. 15A. FIG. 16 shows a specific embodiment 1600 of this configuration. A support substrate 1601 having adequate dielectric properties and thickness containing a plurality of LED devices on its surface such as LED device 1602 is placed on top of an electrode 1603 connected to a voltage source 1606. Although not shown specifically, a gap can exist between electrode 1603 and support substrate 1601, allowing non-contact operation of the back side of the support substrate if desired. Although not shown specifically, an additional dielectric can also be interposed between electrode 1603 and support substrate 1601. The gap (and optional dielectric covering electrode 1603) will modify C_(EFF2) in a similar manner as the top field plate to device gap 509 modified C_(EFF) & C_(EFF)′ using equations 2-4. Field plate 1604 having a dielectric layer 1605 and electrode 1606 connected to a second voltage source 1607 completes the C²I functional test circuit. A camera 1608 placed above field plate 1604 is shown in this embodiment. The equivalent electrical circuit would be similar to FIG. 15B except that the value C_(EFF2) is likely substantially smaller due to the thickness of the support substrate. For example, a support substrate made of sapphire (ε_(r)˜10) of 500 μm in thickness, C′_(EFF2) will be approximately 18 pF/cm², about 65 times smaller than C_(EFF1). A faster voltage ramp and/or a larger voltage value for V₁ could compensate for this loss of coupling efficiency. For example, field plate voltage source 1607 could be driven from 0 to +300V while the support substrate voltage source 1604 could be driven at 0 to −19.5 kV (−300V×65=−19.5 kV). The electric field strength within the sapphire support substrate would be 0.4 MV/cm, below the dielectric breakdown strength of sapphire. If the selected bias conditions cause the electric field strength within any of the dielectric regions approach or exceed safe operating conditions needed to avoid dielectric breakdown, the material or bias conditions must be modified. Driven in this fashion, the LED devices would be driven substantially equivalently and allow C²I functional test without a buried contact within the LED device support substrate. High-voltage waveform generators to drive electrode 1603 can be realized using IGBT, MOSFET, or thyristor devices. High-voltage switches capable of switching up to 36 kV are model number HTS-361-01-C (36 kV, 12 A max current) and model number HTS-361-200-FI (36 kV, 2000 A max current) from Belke Electronic GMBH (Kronberg, Germany). Programmable waveform shaping circuits could slow the fast voltage change to a voltage ramp meeting the desired C²I functional test properties. For a 6″ substrate, the total capacitance would be about 3.2 nF and at 16 measurements per seconds, the ½ CV²f power would be about 10 Watts and the average current would be about 500 μA, safely within normal operating specifications for commercially available high-voltage switches. For the HTS-361-200-FI 2000 A capable switch, current density C²I measurements as high as 11 A/cm² could be performed. Of course, there can be other variations, modifications, and alternatives.

FIG. 17 shows capacitive current injection variants A, B and C which may include up to 3 voltage sources to energize LED structure 1700. Variant A is a vertical LED structure where the top LED structure area corresponds to the top electrode (anode) and the bottom LED structure area corresponds to the bottom electrode (cathode). C_(top-a) is therefore equal to C_(EFF1) and C_(bot) is equal to C_(EFF2) of FIG. 15B. Lateral LED structures such as the LED device 1701 with a small top area etched to expose the n-layer 1702 (cathode) while the balance of the area contains the active layer, top p-layer and p-layer contact 1703 (anode). In variant B, the top anode contact is accessible by an effective capacitance C_(top-b) while cathode contact area 1702 is accessible by an effective capacitance C_(bot-b). The cathode area is also accessible through the support substrate 1704 via capacitance C_(bot) and bottom electrode 1705. If the LED device has a total top surface area equivalent to the variant A, C_(top-b)+C_(bot-b) will equal C_(top-a) and each capacitance value will be proportional to its surface area. For example, if the top anode area is 75% of the total area (and the top cathode area is 25% of the total area), C_(top-b)=0.75×C_(top-a) and C_(bot-b)=0.25×C_(top-a). There is no change in C_(bot) since the total bottom area is not modified, however, the active area is smaller (75% in this example) due to the MESA etch contacting method. Effective current density injection value calculations would require active area to total area ratio correction. Variant C has a smaller top cathode contact using a via contact. Except for differing capacitances and active area to total area ratio values, variant C is similar to variant B.

Using the lateral LED MESA structure of variant B as an example LED structure, FIG. 18 shows a test assembly 1800 with three possible contacting options of three separate LED devices 1801 using a top field plate 1802 atop of the devices on the support substrate 1803 with a bottom electrode 1804. Note that electrode 1804 can be an electrode assembly including an overlying dielectric and may be placed in proximity to support substrate 1803. C_(bot) would be modified to include such additional dielectric layer(s) and gap.

Variant A of FIG. 18 has the top field plate electrode 1805 covering the complete LED device and driven with a voltage ramp to voltage V₁. The bottom electrode 1804 is driven by a negative voltage ramp to voltage V₂. The top field plate electrode 1805 is assumed to be driven using a positive slope according to Phase I of FIG. 6A while the bottom electrode 1804 is assumed to be driven by a negative slope where V₂ is scaled appropriately by the capacitances as explained further below. Variant B has a patterned field plate electrode where only an anode electrode 1806 is present and injects current into the LED device through capacitance C_(t-b). The top cathode capacitance is assumed to be negligible due to the absence of an electrode above the top cathode contact area. Variant C has a patterned field plate electrode structure where the top anode contact is capacitively coupled to field plate electrode 1807 using a positive ramp to voltage V₁ and the top cathode contact is capacitively coupled to field plate electrode 1808 using a negative ramp to voltage V₃.

In yet another embodiment, Variant C of FIG. 18 can inject current in device 1801 below top plate electrodes 1807 and 1808 in a capacitive mode and/or a DC mode without requiring bottom electrode 1804. In an AC (capacitive coupling) mode, the current would be developed using time-varying voltage waveforms impressed across electrodes 1807 and 1808 to capacitively couple a displacement current within the LED device. In DC mode, the device would be energized by a current impressed by a voltage developed across electrodes 1807 and 1808 and an interface region that can has a selected resistivity.

In a DC bias mode, FIG. 18 variant C electrodes develop a voltage gradient along the interface region between electrodes 1807 and 1808. This is a lateral gradient that can be used to bias multiple LED devices if a sufficiently high differential electrode voltage is impressed. For example, if electrode 1807 was removed and a DC bias was developed across electrodes 1806 and 1808, a roughly linear lateral voltage gradient would be developed across the LED devices of variant B and C. To turn on each of the LED devices using this lateral bias mode, each LED device would require a minimum device threshold voltage differential. Assuming 3V for a GaN LED device and 50 μm LED device contact spacing, a voltage gradient of roughly 60 V/mm would be required across the LED device lateral contacts. For multiple device lateral biasing, the actual gradient would be somewhat higher due to device structure and spacing. This mode can be used to bias a string of LED devices such as in FIG. 18. Using a 200 device string of LED devices and a 50 μm device pitch, the bias voltage would be about 60 V/mm×200 devices×0.05 mm or 600V. This bias applied across 10 mm would develop a voltage gradient of sufficient intensity to energize each of the 200 LED devices. This lateral bias mode could be used in conjunction with vertical capacitive bias to functionally test the LED devices on a substrate. If the LED devices are alternating in polarity or a lower LED device count is desired, a suitable patterned top field plate electrode structure could be fabricated that can bias each LED device appropriately. Of course, there can be other variations, modifications, and alternatives.

Unless stated otherwise, zero net charge accumulation in the device (anode charge in=cathode charge out) and equal voltage ramp periods are assumed. Applying these bias conditions to the structures of FIG. 18 for phase I, the various relationships are as follows:

1. Variant A (lateral LED device, continuous field plate) Injected current=C _(t-a) ×dV ₁ /dt V ₂ =−V ₁×(C _(t-a) +C _(b-a))/C _(bot)

2. Variant B (lateral LED device, field plate electrode on anode only) Injected current=C _(t-b) ×dV ₁ /dt V ₂ =−V ₁ ×C _(t-b) /C _(bot)

3. Variant C (lateral LED device, separate field plate electrode on anode and cathode) Injected current=C _(t-c) ×dV ₁ /dt V ₁ ×C _(t-c) =−V ₂ ×C _(bot) −V ₃ ×C _(b-c) For all three structures, J_(LED)=Injected current/active area, where the active area is the area of the MQW structure contacted by the device.

As merely examples to demonstrate the use of C²I measurement on lateral device structures, the LED structures of variants A-C of FIG. 18 are assumed with the following common parameters and photo-collection configuration:

-   -   a. 25 μm×50 μm device size     -   b. 75% (anode & active area) and 25% (cathode) area split for         the lateral LED Device     -   c. Target J_(LED)=0.01 A/cm²     -   d. Sapphire support substrate thickness of 1 mm (ε_(r)=10)     -   e. Phase I voltage ramp time of 25 μsec     -   f. Field plate dielectric: 2 μm silicon nitride (ε_(r)=7.5)     -   g. C_(t-a)=C_(t-b)=C_(t-c)=31 fF     -   h. C_(b-a)=C_(b-c)=10.3 fF     -   i. C_(bot)=0.11 fF     -   j. Injected current=93.7 nA     -   k. E_(opt)=75 nJ/cm²     -   l. Photons/LED device emitted ˜1.5×10⁶ photons     -   m. Photo-electrons detected per LED device (65% quantum         efficiency, 90 mm lens aperture, 175 mm working distance)         ˜16,000 photo-electrons per C²I measurement cycle

Variant A Example 1:

-   -   a. V₁=+75V     -   b. V₂=−28.2 kV

Variant A Example 2 (Top Field Plate Grounded Condition):

-   -   a. V₁=0V     -   b. V₂=−28.275 kV

Variant B Example 1:

-   -   a. V₁=+75V     -   b. V₂=−21.3 kV

Variant B Example 2 (Top Field Plate Grounded Condition):

-   -   a. V₁=0V     -   b. V₂=−21.375 kV

Variant C Example 1:

-   -   a. V₁=+75V     -   b. V₃=−75V, V₂=−14.1 kV

Variant C Example 2:

-   -   a. V₁=+75V     -   b. V₃=−226V, V₂=0V

Although some common-mode charging will occur and higher bottom electrode voltage V₂ may be required when example 2 of variant A of FIG. 18 is used, this embodiment can be particularly useful by only requiring a grounded, nonpatterned field plate for most lateral LED structures.

In yet another embodiment, the top field plate can have a thicker dielectric and require a higher voltage V₁. This may have advantages in lessening top device structure topology effects, facilitate non-contact testing and improve the robustness of the top field plate from slight dielectric imperfections such as scratches and the like. For example, a 200 μm quartz field plate dielectric (element (f) in the previous example) and a 10 um air gap would require the following voltages for variant A of FIG. 18:

-   -   a. V₁=+17.4 kV     -   b. V₂=−28.5 kV         These voltages were chosen to avoid net charge transfer to the         devices, essentially keeping the LED device structure close to         ground potential. It is important to recognize that an air gap         will breakdown and become ionized if the electric field strength         is high enough. According to Paschen's Law for air at standard         pressure and temperature, a 10 μm air gap will breakdown at         about 350V while the above example assumed over 2.8 kV could be         maintained across the air gap. Instead, for V₁ voltages         exceeding about +2.2 kV in this example, the air gap will become         ionized and lower the voltage drop across the air gap. The         required V₁ will therefore be closer to +14.5 kV assuming no         voltage drop across the ionized air gap. Of course, other         voltage waveforms and values are possible to achieve the desired         current injection conditions. Of course, there can be other         variations, modifications, and alternatives.

When using a patterned field plate electrode pattern such as in variants B and C of FIG. 18, a specific electrode pattern would be required for every lateral device structure and the top field plate dielectric thickness must be less than or of the same order as the device pitch to avoid excessive electric field cross-coupling. Moreover, accurate positional registration of a patterned top field plate between the field plate 1802 and the support substrate is important to maximize coupling efficiency and minimize parasitic capacitances (for example between electrode 1807 and the n-layer cathode contact area). Positional registration between the electrode and the LED structure within +1-5% of the device size is believed to be adequate to allow efficient coupling and reproducible C²I measurement. For multiple electrode structures, such as variant C of FIG. 18, registration is also important to avoid damaging the devices under test. For example, mis-registering the field plate to the device structures could negate current injection or even damage the LED devices by injecting substantial reverse bias voltages.

In yet another example, the LED device can be equivalently biased with the top field plate dielectric consisting of a 10 um DI water layer and the bottom electrode is a buried electrode structure of 2 μm silicon dioxide. This bottom structure is similar to FIG. 15A elements 1504 and 1505. For this example, the requisite voltage ramp levels to develop the equivalent LED bias is:

-   -   a. V₁=+35V     -   b. V₂=−145V

In the preceding examples, a lateral device with a 75% MESA structure was used. When using a vertical LED structure such as depicted in variant A of FIG. 17, the effective emission area is about 100% however some modifications to the device to confine current or manage leakage effects on the perimeter may lower this effective area to less than 100%. Assuming a 100% anode active area vertical structure, the equations and bias conditions can be calculated by setting C_(top-a)=C_(top)=C_(bot) and C_(bot-b)=0.

In the preceding equations, the light generation is assumed to occur instantaneously and concurrently with the injected current. In a real LED device, a finite junction capacitance exists that requires charge to bias the device from a first state to the forward voltage state V_(F) before light emission starts occurring. This junction capacitance is a function of the LED potential but for most GaN-based MQW structures, the junction capacitance C′_(jct) is on the order of 60-200 nF/cm². Assuming a constant junction capacitance of 100 nF/cm², a zero-volt initial state and a minimum forward voltage V_(F) of 2.5V, a net charge Q′_(jct) of 250 nC/cm² must be supplied to the LED structure before light output commences. This introduces a charge offset that can limit the lower charge injection limit of the C²I method. Equation 8 can be modified to account for this electrical charging effect (per unit area) as: E′ _(opt)=η_(EXT)×(C′ _(EFF) ×ΔV−C′ _(inj) ×V′)×V _(F)  (10) Where V′ is the effective voltage value required to charge the LED to the emission threshold. This value can be zero if the LED is fully precharged to V_(F) if the LED is fully discharged to 0V.

-   Unless the LED is precharged to V_(F) in some manner before the     charge injection event occurs, the requirement to have the LED     charged to a level close to V_(F) before emission starts occurring     places a minimum ΔV condition as:     ΔV _(min)=(C′ _(inj) ×V _(F))/C′ _(EFF)  (11)     Assuming a zero-bias initial state, there will be little to no light     emission for voltage changes less than ΔV_(min).

This invention includes an ability to precharge the LED devices in a manner that can lower or even eliminate ΔV_(min) by using an external light source to photo-electrically induce an open-circuit voltage on the order of V_(F). An external light source meeting certain characteristics can excite carriers to charge the LED device just before the charge injection event. The characteristics are:

-   -   1. Light having a wavelength less than or about the emission         wavelength of the LED device in order to efficiently excite         carriers across the bandgap.     -   2. Light of sufficient intensity to allow charging within an         acceptable time period and overcome recombination processes.         This effect can be modeled by writing the photodiode equation         for the LED device as follows:         I _(LED) =I _(o)×(e ^(qV/kT)−1)−I _(ph)  (12)

-   Where

-   I_(LED)=Current flowing through the LED device (amperes)

-   I_(o)=dark saturation current (amperes)

-   V=LED voltage (volts)

-   kT/q=Thermal voltage (about 25 mV at room temperature)

-   I_(ph)=Photo-electrically induced current (amperes)

The light induced photocurrent I_(ph) is the quantity that an external light source can generate. The level is roughly equal to the responsivity in A/W (at a specific source wavelength) multiplied by the incident light power impinging on the LED MQW active layer in watts.

The LED voltage under open-circuit (I_(LED)=0) conditions can be derived by rewriting equation 12 to solve for V_(LED): V _(LED)(open-circuit)=kT/q×ln(I _(ph) /I _(o))  (13)

If I_(ph) is high enough, V_(LED) can approach V_(F) and thus can lower ΔV_(min) to a relatively small value. To prove this effect, a GaN-based LED (Model 455D2 PCB mounted LED from Thorlabs, Inc., Newton, N.J. USA) having an emitting area of 1 mm², 455 nm emission wavelength and junction capacitance of about 1.3 nF (measured at V=0) was used as a test LED. The LED, now operated and measured as a photodiode, was illuminated using a similar GaN-based LED (Model 455L3 mounted LED driven from a Model LEDD1B LED driver, both from Thorlabs, Inc., Newton, N.J. USA) having an emission wavelength of 455 nm. The source LED was driven with 1000 mA of forward current. Irradiance at 200 mm distance was specified at about 30 μW/mm². The measured I_(ph) (short-circuit current condition) was about 5 μA and an open-circuit voltage V_(LED) of about 2.2V. This is close to the expected photocurrent of about 30 μW/mm²×1 mm²×0.15 A/W=4.5 μA, where 0.15 A/W is an assumed responsivity for this device based on similar devices and type. This confirms the potential to use an external light source to precharge the LEDs to levels close to V_(F) prior to the charge injection phase (Phase I) to reduce or eliminate ΔV_(min).

In a certain embodiment, the external light source would be activated and used to precharge the LEDs under test but turned off just prior to the start of the camera integration phase during Phase 1. This is desirable if the light from this precharge phase light source substantially interferes with the LED emission measurement. For example, a 455 nm external light source to precharge LED devices also emitting at 455 nm would add to the measurement to lower the measurement accuracy and possibly saturate the camera sensor. In this embodiment, the delay between the shutoff of the external light source to the Phase 1 electrical voltage ramp start can lower the precharge state voltage through LED diode leakage current and other loss mechanisms such as low LED light emission. While the shutoff time of the external light source used and the camera integration to electrical ramp time delays imposes a lower limit to the delay time, keeping the precharge LED voltage state relaxation to a minimum imposes an upper limit to the delay. In the example above, the 455 nm LED light source required about 500 usec to turn off while an excessive precharge relaxation occurred after a few milliseconds of delay. FIG. 19

FIG. 19 shows a measured response of a test LED driven with a voltage ramp after being illuminated with an external light source. The test LED is a 455D2 PCB mounted LED driven by a voltage ramp of 3 μsec duration across a 100 pF capacitor capable of withstanding the voltage waveform without breakdown. The optical measurement system consists of a camera (GS3-U3-23S6M-C from PointGrey Research Inc., Richmond, BC, Canada) with a 0.9× collection lens (#62-901 TECHSPEC™ large format telecentric lens manufactured by Edmund Optics, Barrington, N.J., USA). The camera was set with gain=0 dB, 500 μsec integration window and external triggering. The camera integration window was adjusted to minimize the residual external source effect on the camera response. The integration window start time was set at a set to 200 μsec delay from the external light source turn off and the pulse ramp start time was set to occur 300 μsec within the integration window. The external light source was a 455L3 mounted LED driven from a LEDD1B LED driver, both from Thorlabs, Inc., Newton, N.J. USA. The external light source was positioned about 200 mm from the test LED and driven with 1000 mA current. The expected external light source flux impinging on the test LED is about 30 μW. The response with and without the external light source precharge shows a clear improvement in the stored charge offset of equation 10. Decreasing the external light source to injection delay was shown to improve the emission offset, confirming that there is a relaxation of the LED voltage occurring between the turn-off of the external light source and the LED current injection. FIG. 19 is a graph 1900 showing the result of the precharge effect with a 500 μsec external light source to injection delay. The horizontal scale is the voltage value V₁ in volts while the vertical scale is the measured ADU (Analog to Digital Units) count of the camera pixels receiving the imaged area within the test LED. Curve 1900 is the measured response with no external light source photocurrent injection. The response follows equation 10 and is linear to the voltage injection levels with a voltage offset 1902 of approximately 80V. This corresponds roughly to Q_(jct) of 80V×100 pF=8 nC. Referring to equation 10 for a specific device of 1 mm² in area, this crossover would occur at C_(EFF)×ΔV=C_(inj)×V′=8 nC. Assuming V′=V_(F) of about 2.5V at these lower injection conditions, C_(inj) is about 3.2 nF or C′_(inj) about 320 nF/cm². This higher than anticipated capacitance may be accounted by a higher junction capacitance process and the interconnect and wiring capacitance of the specific test LED device used.

With the external light source enabled, the curve 1903 shows a clear reduction in the charge offset. Further reduction in timing delay between of the external light source and the LED current injection would allow the response to approach the zero-offset curve 1904.

Further optimization could include substituting a high-power LED light source with faster turnoff characteristic, faster light source driver circuitry and lowering the camera integration start to electrical injection onset delay. Of course, there can be other variations, modifications, and alternatives.

The external light source can greatly improve overall measurement system throughput by utilizing the injected photocurrent to safely decrease phase 3 discharge time. As a first example utilizing the test LED configuration of FIG. 11, the minimum safe discharge time Δt was estimated to be greater than about 60 msec assuming 10 μA/cm² or 10 pA for a safe reverse bias leakage current. Using 30 μW/mm² illumination and 0.15 A/W responsivity as an example, the effective leakage current would increase by 3 nW×0.15 A/W=450 pA. The minimum phase 3 discharge time would be reduced to 1.3 msec. This would improve the capture frame rate to more than 500 frames per second (FPS). Using the test LED configuration of FIG. 19, the reverse leakage current was measured as about 20 nA or 2 μA/cm². With a 100 pF coupling capacitor and 600V injection level, the dark minimum phase 3 discharge time would be about 3 seconds or 0.33 FPS. Using the external illumination injecting about 5 μA of photocurrent, phase 3 discharge time is now reduced to about 12 msec, supporting a throughput measurement rate exceeding 80 FPS. Higher throughput is possible by increasing the external light source flux during the phase 3 period. High-volume manufacturing requirements can thus be met with the use of this external light induced photocurrent injection method. Of course, there can be other variations, modifications, and alternatives.

In yet another embodiment, the external light source would be selected to emit light at a wavelength that can induce photocurrent in the LEDs under test but at a sufficiently different wavelength from the LED emission wavelength range to allow optical filtering to block the external light source emission from being substantially detected by the measurement camera. A shorter wavelength source will tend to improve responsivity by inducing photo-carriers within the test LED more efficiently.

As an example, a 365 nm external light source (such as M365LP1-C1 from Thorlabs, Inc., Newton, N.J. USA) can be used to excite LED devices that emit at longer wavelengths. For example, colored LED devices (red ˜620 nm, green ˜520 nm, blue ˜460 nm) can be effectively filtered from the external light source using filters such as a UV-IR blocking filter and a color filter. For a green LED device test for example, a UV-IR blocking filter (model #89-802) and a green color filter (model #89-792) mounted on a compatible camera lens such as model #62901 0.9× large format telecentric lens is used, all available from Edmund Optics, Barrington, N.J., USA. FIGS. 20A and 20B show the optical transmission curves of these filters. FIG. 20A shows the transmission curve for the UV-IR blocking filter 2000 with the 365 nm external light source 2001 and the LED device emission line 2002 centered around 520 nm. FIG. 20B shows the transmission curve for the green bandpass filter 2003 with the 365 nm external light source 2004 and the LED device emission line 2003 centered around 520 nm. Each of the UV-IR blocking filter and the green bandpass filter would add an optical density of about 4.5 for the 365 nm light while allowing most of the LED device emission to pass. These filters and perhaps others can be used singly or in a stacked configuration to optimize contrast and measurement performance. Of course, there can be other variations, modifications, and alternatives.

Certain image processing methods can be utilized to improve the accuracy of the measured data corresponding to each LED device under test. Each imaged LED device onto the sensor would be imaged onto a specific area within the camera sensor array. One image processing method uses spatial information from the target image to generate a physical centroid (x,y) location for each LED device within the measured camera output data image. This correspondence of LED device centroid location on the support substrate to its corresponding centroid location on the camera sensor can be developed and possibly corrected using camera magnification, optical distortion correction, image capture to sense and locate the LED device matrix and the like. The resulting centroid matrix would therefore be the set of (x,y) location within the sensor image for each LED device. For example, referring to the previous example, a 960×600 LED device set imaged onto a 1920×1200 digital sensor matrix would have a centroid matrix as follows: Centroid for LED (i,j)=Camera data location (x.y) Where i, j are integers (i=1 to 960, j=1 to 600) for each measured LED while the camera location (x,y) is a floating point number within the sensor pixel area (0<x<1920, 0<y<1200). Once this centroid matrix is developed, image processing methods using weighted functions can take the digitized image and develop a set of data values that are extracted using a weighing function where more weight is given to sensor data imaged closest to the physical LED centroid location. Image processing systems can accomplish this convolution function in parallel and usually at frame rate speeds. The LED data values thus comprises of an output LED device (i,j) matrix of data values calculated using centroid weighted functions applied to the digitized camera data in a preferred embodiment.

While the above describes the key steps to C²I data image capture to yield an output LED device (i,j) data point, offset and scaling/normalization operations can also be applied. For example, a “dark” image captured without the voltage waveforms would measure the dark signal for each camera pixel at the current image acquisition parameters. These dark images can be acquired along with each C²I data capture as a form of offset and drift cancellation. The reference can be subtracted from the image data or after both data and reference have been processed using centroid weighted functions described above to yield an offset-corrected LED device (i,j) data matrix. Scaling and normalization operations are also possible.

Additional image processing methods applied to the digitized camera output (proportional to the total integrated light emitted by the LED devices imaged onto the camera sensor(s) during phase I) can be utilized to develop a result indicative of LED device functionality. This functional data will be in the form of a matrix that contains one or more values derived from the measurement. For each LED at location (i,j), there will be a set of n data points Data_(n)(ij)=Value_(n) (where n is an integer greater or equal to 1). Multiple independent Data_(n)(ij) values for each LED under test for example, could be values of light output at differing current density values measured using n measurement sequences taken with different phase I voltage ramp values. Each Data_(n)(ij) measurement data value can in turn be the average of multiple measurements to improve signal-to-noise ratio. Signal averaging is a well-known method where the standard deviation of a signal exhibiting stochastic noise would be reduced by sqrt(m) where m is the number of measurements points that are averaged. For example, if a data point exhibiting a stochastic noise standard deviation of z, averaged data points using the average of 100 data points would have a standard deviation of z/sqrt(100) or 10 times lower.

Once the LED device (i,j) data values are collected, a threshold or set of test criteria can be applied to develop a determination of functionality, perhaps adding a Data_(n)(ij) value of 0 or 1 (0=bad device, 1=good device) for each LED being measured. For example, non-emitting or weakly emitting devices could be labeled as bad devices if a desired minimum threshold is applied to the data. Of course, multiple thresholds and other criteria applied to the set of data values or the pass/fail criteria could also be useful in functional test, repair strategies and process yield analysis (cause and correction). As merely an example, multiple thresholds could be applied to the LED device Data_(n)(ij) data to generate a bin number label for each LED device to match LEDs in functionality and drive a strategy of releasing devices with similar characteristics according to a criteria or set of criteria. Random-access laser lift-off or other individual LED device release methods could aggregate LED devices having similar bin numbers based on the bin label matrix value for each (i,j) LED device. This could be useful to limit display non-uniformity caused by using LED devices having excessively different functional characteristics. Multiple thresholds could also be utilized to develop statistics useful for yield and process control. For example, the standard deviation and other statistical analyses applied to bin data can be an indicator of yield and process stability. Sudden changes in these derived quantities can signal a process excursion. FIG. 21 shows a histogram plot 2100 of several LED devices falling within small ranges of Data_(n) values (called channels or bins) on the vertical scale as a function of Data_(n) in the horizontal scale. Most of the LED devices fall within a functionally acceptable range 2101 while LED devices below threshold 2102 or above threshold 2103 are considered rejects. The width 2104 of the LED device binning function can be useful for yield and process control. LED devices falling within similar bins 2105 could be later aggregated and used for their similar functional test results to improve display uniformity.

If the functional test apparatus according to this invention images less than the desired area and requires a step and repeat function, the centroid matrix may need to be recalculated for each new LED device area to be measured. If the step system is sufficiently accurate to align the next set of LED devices to be measured however, the centroid matrix may be reused. Of course, there can be other variations, modifications, and alternatives.

Generally, a field plate allows functional testing of a substrate containing LED devices to occur either by one or more cameras fixed or moved relative to the field plate. Test equipment cost, complexity, target LED device size and test throughput capability are some of the criteria that must be evaluated before a specific configuration is selected. Other design limitations and criteria must also be addressed to assure measurement functionality to desired specifications. One such design criteria is assuring the phase I voltage waveform across each LED device being tested is not significantly distorted due to contact resistance and parasitic capacitance. For example, a fast voltage ramp for Phase I desired to measure higher current density operation could cause a significant waveform distortion and voltage drop caused by RC low-pass filtering for LED devices situated in the middle of the field plate. This could occur if the field plate electrode or common contact resistance is too high. Mitigation of these effects could happen by lowering the effective contact sheet resistivity or attaching a lower resistivity layer before testing. Finally, a large field plate will require power to charge & discharge the field plate capacitance C_(FP) at the measurement repetition rate and may generate resistive heating within the contact layers. For example, a 6″ substrate field plate using a 3 μm silicon dioxide dielectric layer would have a total capacitance C_(FP) of about 200 nF. If a 16 Hz capture rate and 500V ramp is assumed, the ½ CV²f power would be about 0.5 W. At this proposed operating point, small and manageable test power levels are generated, even with a full 6″ field plate configuration.

In yet other embodiments, an external light source can be used as a method alone or in conjunction with C²I injection to excite the LED devices to measure emission levels in specific time periods controlled by the camera time integration window timing and width. For example, irradiation by an external light source blocked from detection by the camera by spectral filtering means described earlier can be used to measure LED leakage, responsivity and emissivity with improved contrast and signal to noise ratio. For example, a leakage map of an LED array can be captured by scanning the camera integration window from prior to the turnoff time of the external light source to a point later than the turnoff time of the external light source (for example, from 0 to 1 msec). With a sufficiently high external light flux, residual emission and decay characteristics by each LED under test can be measured as a function of this delay. Defective LEDs usually exhibit significant non-radiative leakage and other mechanisms that decrease LED light emission. The resulting map can be used to generate a defect file of all measured LEDs to identify LEDs that have low abilities to emit light after being irradiated by the external light source. C²I methods can be added to the external light source excitation to add an additional level of injection that further increases the ability to functionally test the LEDs to determine functionality.

The signal processing use of offset cancellation (such as “dark image” subtraction) and the use of an external light source can be combined to develop different modes of test. If a processed data is the subtraction of a second measurement “B” from a first measurement “A”, each image processing data point in the data array would be (A-B) to form an offset corrected data array or image. If A is the functional image with the voltage waveforms while the B is the image without the voltage waveforms, the (A-B) functional image would be corrected for “dark image” offsets. In this example, the current injection “EL” or electroluminescent input is said to be in differential mode (DM). If the voltage waveforms are present in both A and B images, the EL input is said to be in “Common Mode” or CM. In CM mode, the data is essentially subtracted out and the (A-B) frame would be a null image. Similarly, if the external light source is present in the A image but not in the B image, the “PL” or photoluminescent light bias would be in differential mode or DM mode. Finally, if the external light source input is present in both A image and B images, the PL input would be said to be in common mode or CM mode. Using this as a reference, EL and PL modes of operation can be described as follows:

-   -   1. EL=DM, PL=No light: EL functional test without external light         source     -   2. EL=DM, PL=CM: EL functional test with common-mode external         light bias     -   3. EL=No voltage input, PL=DM: PL test     -   4. EL=DM, PL=DM: EL functional test with differential-mode         external light bias         The other possible modes are of limited use. For example, EL=CM,         PL=CM would result in a null result.

The measurement mode of PL test (3 above) and EL functional test with or without light bias (1, 2 or 4 above) can be measured in quick succession and yield useful information about the LED devices. If the external light is used to bias the device as in FIG. 19, the corresponding EL functional test would be mode 2 (EL=DM, PL=CM) while a PL test would be mode 3 (EL=No voltage input, PL=DM). Of course, there can be other variations, modifications, and alternatives.

While the above is a full description of the specific embodiments, various modifications, alternative constructions and equivalents may be used. Although the above has been described using a selected sequence of steps, any combination of any elements of steps described as well as others may be used. Additionally, certain steps may be combined and/or eliminated depending upon the embodiment. Furthermore, although the description and examples has been directed towards GaN LED devices on a planar surface, any planar or curved surface containing photon emitting devices could be functionally tested using the C²I method. For example, Vertical-Cavity Surface-Emitting Lasers (VCSELs), Organic LEDs (OLEDs), silicon photonics devices and other surface emitting devices could be tested using this invention. Additionally, in another example, II-VI semiconductor materials and associated devices can also be used. Of course, there can be other variations, modifications, and alternatives. Therefore, the above description and illustrations should not be taken as limiting the scope of the present invention which is defined by the appended claims. 

What is claimed is:
 1. An apparatus for observing light emission from a light-emitting device structure disposed on a support substrate having a first contact layer accessible from a surface and a second contact layer included on the light-emitting device structure, the light emitting device structure being selected from either a vertical light emitting device structure or a lateral light emitting device structure, the apparatus comprising: a field plate device, the field plate device having a first face and a second face opposing the first face, the second face comprising a conductive layer, the conductive layer positionable in close proximity to at least a portion of the first contact layer of the light-emitting device structure with an intervening interface region; a voltage source connected to the conductive layer of the field plate device for producing a voltage and a capacitance per unit area of the field plate device, the voltage source being capable of generating a time-varying voltage waveform, the voltage source having a first terminal and a second terminal, the first terminal to have a first potential coupled to the conductive layer of the field plate device, the second terminal to have a second potential, the voltage source being capable of injecting a capacitively coupled current to the light emitting device structure to cause at least a portion of the light-emitting device structure to emit electromagnetic radiation in a pattern; a detector device coupled to the light emitting device structure to form an image of the electromagnetic radiation in the pattern derived from the light-emitting device structure; and an external light source to irradiate the light-emitting device structure to induce a photocurrent.
 2. The apparatus of claim 1 wherein the second terminal is electrically coupled to the backside of the support substrate, the second potential being at ground potential or at negative potential or positive potential in relation to the ground potential to create the time-varying voltage waveform.
 3. The apparatus of claim 1 wherein the first terminal is electrically connected to the conductive layer of the field plate device and being at a ground potential or at a negative potential or a positive potential in relation to the ground potential to create the first potential.
 4. The apparatus of claim 1, wherein the interface region is a gap medium.
 5. The apparatus of claim 4, wherein the gap medium comprises a gas or vacuum.
 6. The apparatus of claim 4, wherein the gap medium comprises a liquid.
 7. The apparatus of claim 6, wherein the liquid is selected from the group consisting of water, deionized water, alcohol, methanol, and ethylene glycol.
 8. The apparatus according to claim 3 wherein the conductive layer is patterned and comprises a first portion within a vicinity of the first contact layer and a second portion within a vicinity of the second contact layer, the first portion being electrically and physically separated from the second portion the first portion being connected to the first terminal of the voltage source, and the second portion being connected to another voltage source or a ground potential.
 9. The apparatus according to claim 3 wherein the conductive layer comprises a first portion within a vicinity of the first contact layer and an absence of a conductive layer within a vicinity of the second contact layer.
 10. The apparatus of claim 1, wherein the interface region comprises a dielectric layer and a gap medium.
 11. The apparatus of claim 10, wherein the gap medium comprises a gas or vacuum.
 12. The apparatus of claim 10, wherein the gap medium comprises a liquid.
 13. The apparatus of claim 12, wherein the liquid is selected from the group consisting of water, deionized water, alcohol, methanol, and ethylene glycol.
 14. The apparatus of claim 10, wherein the dielectric layer is a layer present between the conductive layer and the gap medium selected from the group consisting of silicon dioxide, silicon nitride, alumina (Al203), glass, quartz, and plastic.
 15. The apparatus according to claim 1 wherein the lateral light emitting device structure comprises a first contact layer and a second contact layer, the first contact layer and the second contact layer being electrically accessible on at least one face of the lateral light emitting device structure.
 16. The apparatus according to claim 1 wherein the image is derived from a light output of an emitting surface of the light emitting diode structure resulting from application of a capacitively coupled time varying voltage waveform.
 17. The apparatus according to claim 1 wherein the vertical light emitting device structure comprises the first contact layer and the second contact layer underlying the light emitting device structure.
 18. The apparatus according to claim 1 further comprising a lens coupled to the detector device for focusing the electromagnetic radiation provided on the detector device; wherein the external light source wavelength is shorter than the emission wavelength of the light-emitting device structure; wherein the gap medium comprises a liquid; and wherein the field plate device is placed in close proximity to the support substrate using a seal near a periphery of the field plate and the liquid is introduced into a gap between the conductive layer and the first contact layer using fill input and output ports.
 19. The apparatus according to claim 1 wherein the field plate device is transmissive to the electromagnetic radiation and the electromagnetic radiation passes through the field plate device.
 20. The apparatus according to claim 1 wherein the support substrate is transmissive to the electromagnetic radiation and the electromagnetic radiation passes through the support substrate.
 21. The apparatus according to claim 1 wherein the detector device comprises imaging the electromagnetic radiation to produce an observable map of the pattern of electromagnetic radiation as a function of position over the light-emitting device structure of the support substrate.
 22. The apparatus according to claim 1 wherein detector device comprises a camera; and further comprising an electrical access coupled to the second contact layer of the light-emitting device structure using an electrical contact or using capacitive coupling.
 23. The apparatus according to claim 22 wherein the field plate device is transmissive and the camera is mounted to image the light-emitting device structure to collect the electromagnetic radiation through the field plate device.
 24. The apparatus according to claim 22 wherein the support substrate is transmissive and the camera is mounted to image the light-emitting device structure to collect the electromagnetic radiation through the support substrate.
 25. The apparatus according to claim 22 wherein the camera integrates the electromagnetic radiation over the time-varying voltage waveform to produce a spatial map of total electromagnetic radiation produced over the light-emitting device structure.
 26. The apparatus according to claim 25 wherein the spatial map of integrated electromagnetic radiation is processed using image processing device to perform one or more of the following functions: signal averaging, thresholding and binning to develop a spatially-dependent functional test result of the light-emitting device structure.
 27. The apparatus according to claim 22 wherein the camera is one of a plurality of cameras, each positioned to image a separate area of the light-emitting device structure.
 28. The apparatus according to claim 22 wherein the camera and a smaller field plate device is an assembly that can image a smaller test area and mechanically indexed in a step and repeat fashion for more complete test coverage.
 29. The apparatus according to claim 1 wherein the time-varying voltage waveform is a voltage ramp from a first voltage potential to a second voltage potential to forward bias the light-emitting device structure at selected current density during a measurement phase.
 30. The apparatus according to claim 29 wherein the time-varying voltage waveform after the measurement phase is returned from the second voltage potential to the first voltage potential over a time period called a reset phase selected to use a light-emitting device reverse bias leakage current density and avoid exceeding potentially damaging reverse bias voltage.
 31. The apparatus according to claim 1 wherein the first contact layer of the light-emitting device structure is isolated using a material removal process to realize a plurality of individually addressable light-emitting devices.
 32. The apparatus according to claim 1 wherein the first and second contact layers of the light-emitting device structure are isolated using a material removal process to realize a plurality of individually addressable light-emitting devices.
 33. The apparatus according to claim 1 wherein the external light source wavelength is shorter than the emission wavelength of the light-emitting device structure.
 34. The apparatus according to claim 1 wherein the photocurrent forward biases the light-emitting device structure prior to the time-varying voltage waveform.
 35. The apparatus according to claim 1 wherein the photocurrent increases a leakage current of the light-emitting device structure after a measurement phase to reduce a reset phase time period.
 36. The apparatus according to claim 1 wherein spectral filtering consisting of blocking filters are interposed between the detector device and the light-emitting device structure to block unwanted light and pass the light emitted from the light-emitting device structure.
 37. The apparatus according to claim 36 wherein the detector has a light integration time start and duration; wherein the light-emitting device structure emission efficiency is measured at a specific time window with respect to modulation of the external light source irradiation.
 38. The apparatus according to claim 36 wherein a time-varying voltage waveform is combined with external light irradiation from the external light source to determine light-emitting device structure functionality.
 39. The apparatus according to claim 1 wherein the field plate device is approximately the same areal dimension to the support substrate and is placed on the support substrate to allow substantially complete functional testing of the support substrate without step and repeat indexing of the field plate device.
 40. The apparatus according to claim 1 wherein the field plate device is placed in close proximity to the support substrate using a seal near the periphery of the field plate and air is evacuated from the gap using a vacuum port.
 41. The apparatus according to claim 1 wherein the field plate device is placed in close proximity to the support substrate using a seal near a periphery of the field plate and the liquid is introduced into a gap between the conductive layer and the first contact layer using fill input and output ports.
 42. The apparatus according to claim 1 wherein the close proximity between the field plate and the support substrate device is actual contact. 